IRFU214B Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features - - - - - - 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 n C) Low Crss ( typical 7.5 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - D-PAK IRFR Series I-PAK IRFU Series G! ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR214B / IRFU214B 250 2.2 1.4 8.5 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V m J A m J V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Power Dissipation (TC = 25°C) 45 2.2 2.5 5.5 2.5 25 0.2 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient - Thermal Resistance, Junction-to-Ambient Typ ---Max 5.08 50 110 Units °C/W °C/W...