IS-2100ARH Description
IS-2100ARH, IS-2100AEH Radiation Hardened High Frequency Half Bridge Drivers Datasheet The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and highside gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol.
IS-2100ARH Key Features
- Electrically screened to DLA SMD # 5962-99536
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- TID Rad Hard Assurance (RHA) testing ◦ HDR (50-300rad(Si)/s): 300krad(Si) ◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only)
- DI RSG process provides latch-up immunity
- SEU rating: <90MeV/mg/cm2
- Bootstrap supply maximum voltage to 150V
- Drives 1000pF load at 1MHz with rise and fall times
- 1.5A (typical) peak output current
- Independent inputs for non-half bridge topologies