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IS-2100ARH - Radiation Hardened High Frequency Half Bridge Driver

Key Features

  • Electrically screened to DLA SMD # 5962-99536.
  • QML qualified per MIL-PRF-38535 requirements.
  • Radiation environment.
  • TID Rad Hard Assurance (RHA) testing ◦ HDR (50-300rad(Si)/s): 300krad(Si) ◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only).
  • DI RSG process provides latch-up immunity.
  • SEU rating:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS-2100ARH, IS-2100AEH Radiation Hardened High Frequency Half Bridge Drivers Datasheet The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and highside gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).