IS-2100ARH Datasheet | Intersil

IS-2100ARH, IS-2100AEH Radiation Hardened High Frequency Half Bridge Drivers The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and highside gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and pares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs). If the SD pin is higher than the VIH threshold, both outputs are driven low regardless of the state of the LIN or HIN pins. While SD is low, the outputs match the states of their corresponding input. The IS-2100ARH, IS-2100AEH output drivers are independent. There is no form of shoot-through protection or non-overlapping time. If shoot-through protection is necessary, that must be considered when generating the LIN and HIN signals. Inputs Outputs Features - Electrically screened to DLA SMD # 5962-99536 - QML qualified per MIL-PRF-38535 requirements - Radiation environment - TID Rad Hard Assurance (RHA) testing ◦ HDR (50-300rad(Si)/s): 300krad(Si) ◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only) - DI RSG process provides latch-up immunity - SEU rating: <90Me V/mg/cm2 - Vertical device architecture reduces sensitivity to low dose rates - Bootstrap supply maximum voltage to 150V - Drives 1000p F load at 1MHz with rise and fall times of 30ns (typical) - 1.5A (typical) peak output current - Independent inputs for non-half bridge topologies - Low DC power consumption: 60m W (typical) - Operates with VDD = VCC over 12V to 20V range - Low-side supply...