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IS-2100AEH - Radiation Hardened High Frequency Half Bridge Driver

Download the IS-2100AEH datasheet PDF. This datasheet also covers the IS-2100ARH variant, as both devices belong to the same radiation hardened high frequency half bridge driver family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Electrically screened to DLA SMD # 5962-99536.
  • QML qualified per MIL-PRF-38535 requirements.
  • Radiation environment.
  • TID Rad Hard Assurance (RHA) testing ◦ HDR (50-300rad(Si)/s): 300krad(Si) ◦ LDR (≤ 10mrad(Si)/s): 50krad(Si) (AEH Only).
  • DI RSG process provides latch-up immunity.
  • SEU rating:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS-2100ARH_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS-2100ARH Radiation Hardened High Frequency Half Bridge Driver Intersil Corporation
IS-2981RH Radiation Hardened 8-Channel Source Driver Intersil Corporation
IS-1009RH Radiation Hardened 2.5V Reference Intersil Corporation
IS-139ASRH Single Event Radiation Hardened Quad Voltage Comparator Intersil Corporation
IS-1715ARH Radiation Hardened Complementary Switch FET Driver Intersil Corporation

Other Datasheets by Intersil (now Renesas)

Part Number Description
IS-1009EH Radiation Hardened 2.5V Reference
IS-139ASEH Single Event Radiation Hardened Quad Voltage Comparator
IS-1715AEH Radiation Hardened Complementary Switch FET Driver
IS-1825ASRH High-Speed Dual Output PWMs
IS-1825BSEH High-Speed Dual Output PWMs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS-2100ARH, IS-2100AEH Radiation Hardened High Frequency Half Bridge Drivers Datasheet The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and highside gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).