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RF1K49221 - 2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET

Datasheet Summary

Features

  • 2.5A, 60V.
  • rDS(ON) = 0.130Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE® Model.
  • Thermal Impedance PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND RF1K49221 S1(1) G1(2) D1(8) D1(7) Ordering Information PART NUMBER RF1K49221.

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Datasheet Details

Part number RF1K49221
Manufacturer Intersil Corporation
File Size 109.80 KB
Description 2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
Datasheet download datasheet RF1K49221 Datasheet
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Full PDF Text Transcription

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RF1K49221 Data Sheet August 1999 File Number 4314.1 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET™ Power MOSFET The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. The RF1K49221 incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49221. Features • 2.5A, 60V • rDS(ON) = 0.
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