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RF3V49092 - 20A/10A/ 12V/ 0.060/0.140 Ohm/ Logic Level/ Complementary Power MOSFET

Datasheet Summary

Features

  • 20A, 12V (N-Channel) 10A, 12V (P-Channel).
  • rDS(ON) = 0.060Ω (N-Channel) rDS(ON) = 0.140Ω (P-Channel).
  • Temperature Compensating PSPICE® Model.
  • On-Resistance vs Gate Drive Voltage Curves.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Symbol S2 Ordering Information PART NUMBER RF3V49092 RF3S49092SM.

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Datasheet Details

Part number RF3V49092
Manufacturer Intersil Corporation
File Size 244.05 KB
Description 20A/10A/ 12V/ 0.060/0.140 Ohm/ Logic Level/ Complementary Power MOSFET
Datasheet download datasheet RF3V49092 Datasheet
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RF3V49092, RF3S49092SM Data Sheet November 1999 File Number 4600.1 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49092.
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