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RFD12N06RLESM Datasheet 12a/ 60v/ 0.135 Ohm/ N-channel/ Logic Level/ Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09861.

Key Features

  • 12A, 60V.
  • rDS(ON) = 0.135Ω.
  • Electrostatic Discharge Protected.
  • UIS Rating Curve (Single Pulse).
  • Design Optimized for 5V Gate Drive.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E) /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- Symbol D Orde.

Similar Datasheet

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Fairchild Semiconductor Logo RFD12N06RLESM 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor Logo RFD12N06RLE 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET Fairchild Semiconductor

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