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RFD4N06LSM Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520.

Key Features

  • 4A, 60V.
  • rDS(ON) = 0.600Ω.
  • Design Optimized for 5 Volt Gate Drive.
  • Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits.
  • SOA is Power Dissipation Limited.
  • 175oC Rated Junction Temperature.
  • Logic Level Gate.
  • High Input Impedance.
  • Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM.

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo RFD4N06LSM N-Channel Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor Logo RFD4N06L N-Channel Power MOSFET Fairchild Semiconductor

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