RFG50N05L Overview
RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is acplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages. Formerly developmental type TA09872. Features •...
RFG50N05L Key Features
- 50A, 50V
- rDS(ON) = 0.022Ω
- UIS SOA Rating Curve (Single Pulse)
- Design Optimized for 5V Gate Drive
- Can be Driven Directly from CMOS, NMOS, TTL Circuits
- patible with Automotive Drive Requirements
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
RFG50N05L Applications
- 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages. Formerly developmental type TA09872
