RFK25N18 Overview
RFK25N18, RFK25N20 Data Sheet October 1998 File Number 1500.3 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These...
RFK25N18 Key Features
- 25A, 180V and 200V
- rDS(ON) = 0.150Ω