Click to expand full text
Semiconductor
RFL1P08, RFL1P10
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9400.
July 1998
Features
• 1A, -80V and -100V • rDS(ON) = 3.
RFL1P10 Datasheet
