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RFL1N10L

Manufacturer: Intersil (now Renesas)

RFL1N10L datasheet by Intersil (now Renesas).

RFL1N10L datasheet preview

RFL1N10L Datasheet Details

Part number RFL1N10L
Datasheet RFL1N10L_IntersilCorporation.pdf
File Size 29.91 KB
Manufacturer Intersil (now Renesas)
Description N-Channel Power MOSFET
RFL1N10L page 2 RFL1N10L page 3

RFL1N10L Overview

This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off...

RFL1N10L Key Features

  • 1A, 100V
  • rDS(ON) = 1.200Ω
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