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RFL1N12L - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

Key Features

  • 1A, 120V and 150V.
  • rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering Information PART NUMBER RFL1N12L RFL1N15L.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFL1N12 N-Channel Power MOSFET
RFL1N10 N-Channel Power MOSFET
RFL1N10L N-Channel Power MOSFET
RFL1N15 N-Channel Power MOSFET
RFL1N15L N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFL1N12L, RFL1N15L 1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528. September 1998 Features • 1A, 120V and 150V • rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.