Description
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
Features
- 1A, 120V and 150V.
- rDS(ON) = 1.900Ω
[ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF)
Ordering Information
PART NUMBER RFL1N12L RFL1N15L.
RFL1N15L Datasheet
