RFM6N45
Overview
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
- 6A, 450V and 500V
- rDS(ON) = 1.250Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedence
- Majority Carrier Device
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM6 N45, RFP6N4 5, RFP6N5 0) /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN Symbol
