RFM6N45 Overview
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425.
RFM6N45 Key Features
- 6A, 450V and 500V
- rDS(ON) = 1.250Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedence
- Majority Carrier Device
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”