Datasheet4U Logo Datasheet4U.com

RFM6N45 - N-Channel Power MOSFET

Datasheet Summary

Description

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow

Features

  • 6A, 450V and 500V.
  • rDS(ON) = 1.250Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedence.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM6 N45, RFP6N4 5, RFP6N5 0) /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChann.

📥 Download Datasheet

Datasheet preview – RFM6N45

Datasheet Details

Part number RFM6N45
Manufacturer Intersil Corporation
File Size 32.83 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFM6N45 Datasheet
Additional preview pages of the RFM6N45 datasheet.

📁 Similar Datasheet

  • RFM60 - Crystal-less SOC Transmitter Module (HOPERF)
  • RFM63B - ISM TRANSCEIVER MODULE (HOPERF)
  • RFM63W - ISM TRANSCEIVER MODULE (HOPERF)
  • RFM64B - ISM TRANSCEIVER MODULE (HOPERF)
  • RFM64W - ISM TRANSCEIVER MODULE (HOPERF)
  • RFM65CW - ISM RECEIVER MODULE (HOPERF)
  • RFM65W - ISM RECEIVER MODULE (HOPERF)
  • RFM66W - ISM TRANSCEIVER MODULE (HOPERF)
  • RFM67W - ISM TRANSMITTER MODULE (HOPERF)
  • RFM68CW - Low Cost ISM Transmitter Module (HOPERF)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. September 1998 Features • 6A, 450V and 500V • rDS(ON) = 1.
Published: |