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RFP4N06 - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4A, 50V and 60V.
  • rDS(ON) = 0.800Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP4N05 RFP4N06.

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Full PDF Text Transcription for RFP4N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP4N06. For precise diagrams, and layout, please refer to the original PDF.

RFP4N05, RFP4N06 June 1999 File Number 2880.2 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect tran...

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ese are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. Features • 4A, 50V and 60V • rDS(ON) = 0.800Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP4N05 RFP4N06 PACKAGE TO-220AB TO-220AB BRAND RFP4N05 R

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