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RFP4N06L - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4A, 50V and 60V.
  • rDS(ON) = 0.800Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds Ordering Information PART NUMBER RFP4N05L RFP4N06L.

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Full PDF Text Transcription for RFP4N06L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP4N06L. For precise diagrams, and layout, please refer to the original PDF.

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhanc...

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N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09520. Features • 4A, 50V and 60V • rDS(ON) = 0.

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