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RFT3055LE - 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET

Key Features

  • 2.0A, 60V.
  • rDS(ON) = 0.150Ω.
  • 2kV ESD Protected.
  • Temperature Compensating PSPICE® Model.
  • Thermal Impedance SPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFT3055LE.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFT1P06E 1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET
RFT2P03L 2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFT3055LE Data Sheet August 1999 File Number 4537.3 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158. Features • 2.0A, 60V • rDS(ON) = 0.