Intersil BUZ32
N-Channel Power MOSFET
| Part No. | BUZ32 |
|---|---|
| Datasheet | BUZ32 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power● rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as
● SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
● Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V,
● Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400
● High Input Impedance Ohm, N- Formerly developmental type TA17412.
● Majority Carrier Device Channel
● Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ32 TO-220AB BUZ32 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TOSOURCE DRAIN 220AB) GATE /Cr...
