STMicroelectronics BUZ32
N-Channel MOSFET
APPLICATIONS
● HIGH CURRENT - FOR PULSED LASER DRIVES● RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)
●
● ULTRA FAST SWITCHING
● EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● SWITCHING MODE POWER SUPPLIES
● MOTOR CONTROLS FOR ROBOTICS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical uses include robotcs, laser diode drives, UPS, SMPS, DC/DC, DC switch for telecomms and electric vehicle drives. , TO-220 G~ INTERNAL SCHEMATIC DIAGRAM 5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (continuous) Tc =25°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)● Introduced in 1989 week 1 June 1988...