Datasheet Summary
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ32
Voss 200 V
Ros(on) 0.4 0
10 9.5 A
- 200 VOLTS FOR TELES APPLICATIONS
- HIGH CURRENT
- FOR PULSED LASER
DRIVES
- RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (ENERGY TEST)
- - ULTRA FAST SWITCHING
- EASY DRIVE
- FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS:
- SWITCHING MODE POWER SUPPLIES
- MOTOR CONTROLS FOR ROBOTICS
- channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical uses include robotcs, laser diode drives, UPS, SMPS, DC/DC, DC switch for telems and electric vehicle...
