BUZ32
Overview
- 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as
- SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
- Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400
- High Input Impedance Ohm, N- Formerly developmental type TA17412.
- Majority Carrier Device Channel
- Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ32 TO-220AB BUZ32 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TOSOURCE DRAIN 220AB) GATE /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ32
