Datasheet Summary
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
- 9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as
- SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers,
- Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400
- High Input Impedance Ohm, N- Formerly...
