| Part Number | BUZ32 |
|---|---|
| Manufacturer | Intersil |
| Overview |
BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
• 9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate pow.
* 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as * SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, * Nanosecond Switching Speeds (9.. |
BUZ32 Datasheet
The BUZ32 is a N-Channel Power MOSFET.
| Part Number | BUZ32 |
|---|---|
| Description | Power Transistor |
| Manufacturer | Infineon |
| Overview | SIPMOS ® Power Transistor BUZ 32 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 Ω TO-220 A. r Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V,. |
| Part Number | BUZ32 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
BUZ32
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ32
Voss 200 V
Ros(on) 0.4 0
10 9.5 A
• 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH CURRENT - FOR PULSED LASER
DRIVES • RATED FOR UNC.
ating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
* Introduced in 1989 week 1 June 1988 200 V 200 V ±20 V 9.5 A 38 A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 195 BUZ32 THERMAL DATA Rthj _ case Thermal resistance junction-case R. |
| Part Number | BUZ32 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
BUZ32
·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·M.
*9.5A, 200V *RDS(ON) = 0.400Ω *SOA is Power Dissipation Limited *Nanosecond Switching Speeds *Linear Transfer Characteristics *High Input Impedance *Majority Carrier Device *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Designed for applications suc. |