Intersil BUZ45B
N-Channel Power MOSFET
| Part No. | BUZ45B |
|---|---|
| Datasheet | BUZ45B Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power● rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as
● SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching
● Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (10A,
● Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V,
● High Input Impedance 0.500 Formerly developmental type TA17435.
● Majority Carrier Device Ohm, NChannel Ordering Information Symbol PART NUMBER PACKAGE BRAND Power D BUZ45B TO-204AA BUZ45B MOSNOTE: When ordering, use the entire part number. FET) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power DRAIN MOS(FLANGE) FET, TO204AA) SOURCE (PIN 2) /Creator GATE (PIN 1) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
