Datasheet Summary
isc N-Channel Mosfet Transistor
- Features
- Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max)
- SOA is Power Dissipation Limited
- High speed switching
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
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