BUZ45B
Key Features
- 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching
- Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (10A,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V,
- High Input Impedance 0.500 Formerly developmental type TA17435.
- Majority Carrier Device Ohm, NChannel Ordering Information Symbol PART NUMBER PACKAGE BRAND Power
- BUZ45B TO-204AA BUZ45B MOSNOTE: When ordering, use the entire part number. FET) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power DRAIN MOS(FLANGE) FET, TO204AA) SOURCE (PIN 2) /Creator GATE (PIN 1) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ45B
