BUZ45B Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET Features - 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as - SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (10A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, - High Input Impedance 0.500 Formerly developmental...