BUZ45A Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2258.1 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET Features - 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as - SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (8.3A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, - High Input Impedance 0.800 Formerly...