BUZ45A
Key Features
- 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.800Ω (BUZ45 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching
- Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (8.3A,
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V,
- High Input Impedance 0.800 Formerly developmental type TA17425.
- Majority Carrier Device Ohm, NChannel Ordering Information Symbol PART NUMBER PACKAGE BRAND Power BUZ45A TO-204AA BUZ45A MOSD NOTE: When ordering, use the entire part number. FET) /Author G () /KeyS words (Harris Semiconductor, N- Packaging Channel JEDEC TO-204AA Power MOSFET, DRAIN (FLANGE) TO204AA) /Creator () /DOCIN FO pdfSOURCE (PIN 2) GATE (PIN 1) mark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998
