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BUZ41A - N-Channel Power MOSFET

Key Features

  • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power.
  • rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for.

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Full PDF Text Transcription (Reference)

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BUZ41A Semiconductor Data Sheet October 1998 File Number 2256.1 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits. • High Input Impedance 500V, Formerly developmental type TA17415. • Majority Carrier Device 1.