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FRE9160H - P-Channel Power MOSFET

Datasheet Summary

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 30A, -100V, RDS(on) = 0.095Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 10.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2.
  • Gamma Dot.

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Datasheet Details

Part number FRE9160H
Manufacturer Intersil
File Size 49.21 KB
Description P-Channel Power MOSFET
Datasheet download datasheet FRE9160H Datasheet
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FRE9160D, FRE9160R, FRE9160H June 1998 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-258AA Features • 30A, -100V, RDS(on) = 0.095Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 10.
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