FRE9160H Overview
The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9...
FRE9160H Key Features
- 30A, -100V, RDS(on) = 0.095Ω
- Second Generation Rad Hard MOSFET Results From New Design Concepts
- Gamma Dot
- Photo Current
- Neutron