FRF9150D Datasheet | Intersil

FRF9150D, FRF9150R, FRF9150H June 1998 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-254AA Features - 23A, -100V, r DS(ON) = 0.140Ω - Second Generation Rad Hard MOSFET Results From New Design Concepts - Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0n A Per-RAD (Si)/s Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2 - Gamma Dot - Photo Current - Neutron Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (mercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol...