Datasheet4U Logo Datasheet4U.com

FRF9150D - P-Channel Power MOSFET

Description

Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Features

  • 23A, -100V, rDS(ON) = 0.140Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD (Si)/s Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2.
  • Gam.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FRF0605 Dual Fast Recovery Power Rectifiers MOSPEC
FRF0610 Dual Fast Recovery Power Rectifiers MOSPEC
FRF0615 Dual Fast Recovery Power Rectifiers MOSPEC
FRF0620 Dual Fast Recovery Power Rectifiers MOSPEC
FRF10A20 10.0 Ampere Insulated Full-pak Common Anode Fast Recovery Rectifier Thinki Semiconductor

Other Datasheets by Intersil (Renesas)

Part Number Description
FRF9150H P-Channel Power MOSFET
FRF9150R P-Channel Power MOSFET
FRF9250D P-Channel Power MOSFET
FRF9250H P-Channel Power MOSFET
FRF9250R P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
FRF9150D, FRF9150R, FRF9150H June 1998 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-254AA G S D Features • 23A, -100V, rDS(ON) = 0.140Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.
Published: |