Intersil FSYE430D
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
| Part No. | FSYE430D |
|---|---|
| Datasheet | FSYE430D Download |
| Manufacturer |  Intersil |
| Description | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 3A, 500V, rDS(ON) = 2.70Ω● Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
● Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
● Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
● Photo Current - 8nA Per-RAD(Si)/s Typically
● Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSYE430D1 FSYE430D3 FSYE430R1 FSYE430R3 FSYE430R4 Packaging SMD.5 Formerly available as type TA17639. 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 FSYE430D, FSYE430R
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specifi...
