Intersil FSYE430R
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
| Part No. | FSYE430R |
|---|---|
| Datasheet | FSYE430R Download |
| Manufacturer |  Intersil |
| Description | Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 9A, -100V, rDS(ON) = 0.280Ω● Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
● Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
● Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
● Photo Current - 1.5nA Per-RAD(Si)/s Typically
● Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging SMD.5 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSYE913A0D1 FSYE913A0D3 FSYE913A0R1 FSYE913A0R3 FSYE913A0R4 Formerly available as type TA17796. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 FSYE913A0D, FSYE913A0R
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified FSYE913A0D, FSYE913A0R Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
