Intersil HGTP2N120BN
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.FEATURES
● 12A, 1200V, TC = 25oC● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Avalanche Rated
● Thermal Impedance SPICE Model Temperature Compensating SABER™ Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTP2N120BN HGTD2N120BNS HGT1S2N120BNS PACKAGE TO-220AB TO-252AA TO-263AB BRAND 2N120BN 2N120BN 2N120BN Packaging JEDEC TO-220AB E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in Tape and Reel, e.g., HGT1S2N120BNS9A. Symbol C JEDEC TO-252AA COLLECTOR (FLANGE) G E E G JEDEC TO-263AB COLLECTOR (FLANGE) G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211...