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HGTP2N120BND Datasheet PDF

Intersil HGTP2N120BND

The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Part No. HGTP2N120BND
Datasheet HGTP2N120BND Download
Manufacturer
Intersil
Description N-Channel IGBT
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HGTP2N120BND datasheet page 1 preview

FEATURES

● 12A, 1200V, TC = 25oC
● 1200V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss
● Thermal Impedance SPICE Model
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB (ALTERNATE VERSION) E Ordering Information PART NUMBER HGTP2N120BND HGT1S2N120BNDS PACKAGE TO-220AB TO-263AB BRAND 2N120BND 2N120BND COLLECTOR (FLANGE) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120BNDS9A. Symbol C JEDEC TO-263AB COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4...
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