Intersil HGTP7N60B3
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.FEATURES
● 14A, 600V, TC = 25oC● 600V Switching SOA Capability
● Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
● Short Circuit Rating
● Low Conduction Loss Packaging JEDEC TO-220AB E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTD7N60B3S HGT1S7N60B3S HGTP7N60B3 PACKAGE TO-252AA TO-263AB TO-220AB BRAND G7N60B G7N60B3 G7N60B3 COLLECTOR (FLANGE) G E JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g., HGTD7N60B3S9A. Symbol C JEDEC TO-252AA COLLECTOR (FLANGE) G G E E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534...