Intersil IRF9510
P-Channel Power MOSFET
FEATURES
● 3.0A, 100V● rDS(ON) = 1.200Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance [ /Title (IRF95 10) /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark Symbol D Ordering Information PART NUMBER IRF9510 PACKAGE TO-220AB BRAND IRF9510 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) [ 5-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9510
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRF9510 -100 -100 -3.0 -2.0 -12 ±20 20 0.16 190 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .