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IRF9510 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated Available.
  • P-channel.
  • 175 °C operating temperature Available.
  • Fast switching.
  • Ease of paralleling.
  • Simple drive requirements.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with.

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Datasheet Details

Part number IRF9510
Manufacturer Vishay
File Size 152.96 KB
Description Power MOSFET
Datasheet download datasheet IRF9510 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRF9510 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • P-channel • 175 °C operating temperature Available • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.