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ISL71441M Datasheet Radiation Tolerant 12V Half-Bridge GaN FET Driver

Manufacturer: Intersil (now Renesas)

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General Description

The ISL71441M is a Radiation Tolerant PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators.

An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL71441M can interface directly to the ISL73847M dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.

Overview

ISL71441M Radiation Tolerant 12V Half-Bridge GaN FET Driver Datasheet.

Key Features

  • Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU).
  • Up to 20V bootstrap voltage half-bridge driver.
  • Programmable 4.5V to 5.5V gate drive voltage.
  • Single tri-level PWM input control.
  • Separate source and sink driver outputs.
  • High-side peak drive: 2A Sourcing, 4A Sinking.
  • Low-side peak drive: 4A Sourcing, 8A Sinking.
  • High and low side programmable dead time control.
  • Highly matched fast propagation delay: 29ns.
  • Full military temp.

More Datasheets from Intersil (now Renesas)

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