ISL71441SLH Overview
ISL71441SLH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL71441SLH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver that drives low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a pact and robust GaN FET half-bridge driver. The ISL71441SLH can...
ISL71441SLH Key Features
- Qualified & Screened to DLA VID V62/25604
- Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
- All screening and QCI is in accordance with SAE AS6294/1)
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low side programmable dead time control
ISL71441SLH Applications
- High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
- 5V or 12V input to 1V output POL regulation