Intersil RFD16N05SM
The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFD16N05SM |
|---|---|
| Datasheet | RFD16N05SM Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 16A, 50V● rDS(ON) = 0.047Ω
● Temperature Compensating PSPICE® Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD16N05 RFD16N05SM PACKAGE TO-251AA TO-252AA BRAND F16N05 F16N05 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 4-420 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD16N05, RFD16N05SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFD16N05, RFD16N05SM, 50 50 16 Refer to Peak Current Curve ± 20 Refer to Figure 5 72 0.48 -55 to 175 300 260 UNITS V V A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
