Intersil RFL1N10L
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.RFL1N10L Specifications
- Drain-Source Resistance : 1.2Ω
- Min Breakdown Voltage : 100V
- Terminals : 3
- Max Power Dissipation : 8.3W
- Power Dissipation : 8.33W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | RFL1N10L |
|---|---|
| Datasheet | RFL1N10L Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Formerly developmental type TA09524.FEATURES
● 1A, 100V● rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 1510.3 1 RFL1N10L
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFL1N10L 100 100 1 5 ±10 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
