Intersil RFL1N10
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | RFL1N10 |
|---|---|
| Datasheet | RFL1N10 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. September 1998FEATURES
● 1A, 80V and 100V● rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering Information PART NUMBER RFL1N08 RFL1N10 PACKAGE TO-205AF TO-205AF BRAND RFL1N08 RFL1N10 NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-204AA DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright...
