Intersil RFP2N12L
The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.| Part No. | RFP2N12L |
|---|---|
| Datasheet | RFP2N12L Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 2A, 120V● rDS(ON) = 1.750Ω
● Design Optimized for 5V Gate Drives
● Can be Driven Directly from QMOS, NMOS, TTL Circuits
● Compatible with Automotive Drive Requirements
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance Ordering Information PART NUMBER RFP2N12L PACKAGE TO-220AB BRAND RFP2N12L
● Majority Carrier Device
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-252 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP2N12L
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFP2N12L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
