Intersil RFP2N12
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | RFP2N12 |
|---|---|
| Datasheet | RFP2N12 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. BRAND RFP2N12 RFP2N15 September 1998FEATURES
● 2A, 120V and 150V● rDS(ON) = 1.750Ω
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFP2N12 RFP2N15 PACKAGE TO-220AB TO-220AB Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge.
