Intersil RFP2N10
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | RFP2N10 |
|---|---|
| Datasheet | RFP2N10 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. July 1998FEATURES
● 2A, 80V and 100V● rDS(ON) 1.05Ω
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFP2N08 RFP2N10 PACKAGE TO-220AB TO-220AB BRAND RFP2N08 RFP2N10 S NOTE: When ordering, use entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
