BUZ42 Datasheet | Intersil

Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features - 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power - rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as - SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching - Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A, - Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, - High Input Impedance 2.000 Formerly developmental type...