Datasheet Summary
Data Sheet
June 2000
File Number
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Intersil Star- Power Rad Hard MOSFETs have been specifically developed for high performance applications in a mercial or military space environment. Star- Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star- Power Gold FETs bine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
Features
- 14A, 200V, rDS(ON) = 0.155Ω
- UIS Rated
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