Datasheet Summary
June 1998
FSS9230D, FSS9230R
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Features
- 4A, -200V, rDS(ON) = 1.60Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current
- 3.0nA Per-RAD(Si)/s Typically
- Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K...