Datasheet Summary
FSYC264D, FSYC264R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is bined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel...