FSYC9055D Datasheet | Intersil

FSYC9055D, FSYC9055R July 1999 Features - Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is bined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications...