Datasheet Summary
Radiation Hardened Quad 2-Input NAND Gate
FN2138 Rev 2.00 August 1995
Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
- Dose Rate Survivability: >1 x 1012 RAD (Si)/s
- Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
- Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ)
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction pared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V
- Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input Current...