Datasheet Summary
HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S
March 1997
10A, 400V and 500V N-Channel IGBTs
Packages
HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
- 10A, 400V and 500V
- VCE(ON) 2.5V Max.
- TFALL ≤1.4µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
Applications
- Power Supplies
- Motor Drives
- Protective Circuits
COLLECTOR (FLANGE) GATE EMITTER
HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA
Description
The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching...